| PART |
Description |
Maker |
| MIE-184H4 |
GaAlAs 1.8mm PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| TSMF3700 |
GaAlAs/GaAlAs Infrared Emitting Diode in SMT Package
|
Vishay Siliconix
|
| SFH458002 SFH4580 SFH4585 |
GaAlAs Infrared Emitters (880 nm) in SMR? Package
GaAlAs Infrared Emitters (880 nm) in SMR庐 Package
GaAlAs Infrared Emitters (880 nm) in SMR㈢ Package
|
OSRAM GmbH
|
| 127124 |
GaAlAs / GaAs Chips (substrate removed)
|
OSA Opto Light GmbH
|
| Q62703-Q1090 SFH483E7800 SFH483 |
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 1 ELEMENT, INFRARED LED, 880 nm
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 发动器，红外Lumineszenzdiode GaAlA红外发射
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BA-3S12UW |
red chips, which are made from GaAlAs on GaAs substrate.
|
http://
Bright LED Electronics Corp.
|
| TSAL7400 TSAL740009 |
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
|
http://
|
| TSAL510009 |
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
|
Vishay Siliconix
|
| TSAL5100 |
High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs
|
Vishay Siliconix
|
| TSAL730009 |
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
|
Vishay Siliconix
|
